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E2I0027-17-Y1 Semiconductor
Semiconductor MSM521209
131,072-Word 9-Bit CMOS STATIC RAM
This version: Jan. 1998 MSM521209 Previous version: Aug. 1996
Pr el im in ar y
DESCRIPTION
The MSM521209 is a 131,072-word by 9-bit CMOS fast static RAM featuring a single 3.3 V power supply operation and direct LVTTL input/output compatibility. Since the circuitry is completely static, external clock and refreshing operations are unnecessary, making this device very easy to use. The MSM521209 can be used in the high-speed operation of an access time 20 ns due to adopting a high-performance CMOS technology. In addition, the MSM521209 is provided with a chip enable signal (CE) suited to the power-down function, and an output enable signal (OE) suited to the I/O bus line control.
FEATURES
* 131,072-word 9-bit configuration * Single 3.3 V power supply * Fully static operation * Operating temperature range: Ta = 0C to 70C * Power dissipation Standby: 2 mA (Max.) Operation: - 20 200 mA (Max.) - 25 180 mA (Max.) - 30 160 mA (Max.) * Access time: - 20 20 ns (Max.) - 25 25 ns (Max.) - 30 30 ns (Max.) * (Input/Output) LVTTL compatible * Power-down function by chip enable signal * 3-state output * Package: 36-pin 400 mil plastic SOJ (SOJ36-P-400-1.27)
(Product : MSM521209-xxJS) xx indicates speed rank.
PRODUCT FAMILY
Family MSM521209-20 MSM521209-25 MSM521209-30 Access Time (Max.) 20 ns 25 ns 30 ns Package 400 mil 36-pin SOJ
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Semiconductor
MSM521209
PIN CONFIGURATION (TOP VIEW)
NC 1 A3 2 A2 3 A1 4 A0 5 CE 6 I/O1 7 I/O2 8 VCC 9 VSS 10 I/O3 11 I/O4 12 WE 13 A16 14 A15 15 A14 16 A13 17 NC 18 36-Pin Plastic SOJ
36 A4 35 A5 34 A6 33 A7 32 OE 31 I/O9 30 I/O8 29 I/O7 28 VSS 27 VCC 26 I/O6 25 I/O5 24 A8 23 A9 22 A10 21 A11 20 A12 19 NC
Pin Name A0 - A16 I/O1 - I/O9 CE OE WE VCC, VSS NC
Function Address Input Data Input/Output Chip Enable Output Enable Write Enable Power Supply No Connection
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Semiconductor
MSM521209
BLOCK DIAGRAM
A12 A13 A14 A15 A16 A5 A6 A7
Row Select
Memory Array 256 Rows 512 Columns 9 Blocks
VCC VSS
I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8 I/O9
Input Data Control
Column I/O Circuits Column Select
A0 A1 A2 A3 A4 A8 A9 A10 A11
CE WE OE
FUNCTION TABLE
Operating Mode Standby Read Cycle Write Cycle CE H L L L WE * H H L OE * H L * Operating Contents Output Floating Output Floating Data Read Data Write
*Don't Care ("H" or "L")
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Semiconductor
MSM521209
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter Power Supply Voltage Pin Voltage Power Dissipation Operating Temperature Storage Temperature Symbol VCC VT PD Topr Tstg Condition Ta = 25C, for VSS Ta = 25C -- -- Rating -0.5 to 4.6 -0.5* to VCC + 0.5 1.0 0 to 70 -55 to 125 Unit V V W C C
* -2.0 V Min. for pulse width less than 10 ns. Recommended Operating Conditions
Parameter Power Supply Voltage Input High Voltage Input Low Voltage Load Capacitance Symbol VCC VSS VIH VIL CL Condition -- VCC = 3.3 V 0.3 V -- Min. 3.0 0 2.0 -0.3* -- Typ. 3.3 0 -- -- -- Max. 3.6 0 VCC + 0.3 0.8 30 Unit V V V V pF
* -2.0 V Min. for pulse width less than 10 ns. Capacitance
(Ta = 25C, f = 1 MHz) Parameter Input Capacitance Input/Output Capacitance Symbol CI CI/O Condition VIN = 0 V VI/O = 0 V Min. -- -- Max. 8 8 Unit pF pF
Note:
This parameter is periodically sampled and not 100% tested.
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Semiconductor DC Characteristics
MSM521209
(VCC = 3.3 V 0.3 V, Ta = 0C to 70C) Parameter Input Leakage Current Input/Output Leakage Current Output High Voltage Output Low Voltage Standby Power Supply Current ICCS1 Operating Power Supply Current ICCA Symbol ILI ILO VOH VOL ICCS Condition VI = 0 to VCC CE = VIH or OE = VIH, VI/O = 0 to VCC IOH = -2 mA IOL = 2 mA CE VCC - 0.2 V, VIN 0.2 V or VIN VCC - 0.2 V CE = VIH, Min. cycle Min. cycle, IOUT = 0 mA Min. -10 -10 2.4 -- -- -- -- MSM521209 Typ. Max. -- -- -- -- -- -- -- 10 10 -- 0.4 2 35 q Unit mA mA V V mA mA mA 200 mA 180 mA 160 mA
q 521209-20 521209-25 521209-30
AC Characteristics Test Conditions
Parameter Input Pulse Level Input Rise and Fall Times Input/Output Timing Level Output Load Condition VIH = 3 V, VIL = 0 V 3 ns 1.4 V See Figures
1.4 V 500 W DOUT 30 pF (Including scope and jig) DOUT
1.4 V 500 W
5 pF (Including scope and jig)
Figure 1 Output Load
Figure 2 Output Load (tOLZ, tCLZ, tOHZ, tCHZ, tWLZ, tWHZ)
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Semiconductor Read Cycle
MSM521209
(VCC = 3.3 V 0.3 V, Ta = 0C to 70C) MSM521209-20 Parameter Read Cycle Time Address Access Time CE Access Time OE Access Time CE to Output in Low-Z OE to Output in Low-Z Output Hold Time from Address Change CE to Output in High-Z OE to Output in High-Z Symbol tRC tAA tCO tOE tCLZ tOLZ tOH tCHZ tOHZ Min. 20 -- -- -- 3 0 5 -- -- Max. -- 20 20 10 -- -- -- 8 8 MSM521209-25 Min. 25 -- -- -- 3 0 5 -- -- Max. -- 25 25 12 -- -- -- 10 10 MSM521209-30 Min. 30 -- -- -- 3 0 5 -- -- Max. -- 30 30 15 -- -- -- 12 12 Unit ns ns ns ns ns ns ns ns ns
Address Controlled Read (WE = H, CE = L, OE = L)
tRC ADDRESS tAA tOH DOUT Dataout Valid
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, ,
Semiconductor CE, OE Controlled Read (WE = H)
tRC ADDRESS tAA tCHZ CE tCO tCLZ OE tOE tOHZ DOUT Dataout Valid tOLZ tOH
MSM521209
Notes :
1. A read cycle occurs during the overlap of CE = "L", OE = "L" and WE = "H". 2. tCHZ and tOHZ are specified by the time when DATA is floating, not defined by the output level.
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Semiconductor Write Cycle
Parameter Write Cycle Time Address Setup Time Write Pulse Width Write Recovery Time Data Setup Time Data Hold Time WE to Output in High-Z CE to End of Write WE CE Symbol tWC tAS tWP tWR tDS tDH tWHZ tCW tAW
MSM521209
(VCC = 3.3 V 0.3 V, Ta = 0C to 70C) MSM521209-20 MSM521209-25 MSM521209-30 Min. 20 0 15 0 0 10 0 -- 15 0 Max. -- -- -- -- -- -- -- 8 -- Min. 25 0 20 0 0 12 0 -- 20 0 Max. -- -- -- -- -- -- -- 10 -- Min. 30 0 25 0 0 14 0 -- 25 0 Max. -- -- -- -- -- -- -- 12 -- Unit ns ns ns ns ns ns ns ns
, ,
Address Valid to End of Write 15 -- 20 -- 25 -- ns Output Active from End of Write tWLZ -- -- -- ns
WE Controlled Write (OE = L)
tWC
ADDRESS
tCW
CE
tAW
WE
tAS
tWR
tWP
tWLZ
DOUT
tDS
tDH
tWHZ
DIN
Data In
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Semiconductor CE Controlled Write (OE = H)
tWC ADDRESS tAS CE tCW
MSM521209
WE
DIN
DOUT
Notes:

tAW tWR tWP tDS tDH Data In High Impedance
1. 2. 3. 4. 5. 6.
A write cycle occurs during the overlap of CE = "L" and WE = "L". OE may be either of "H" or "L" in the write cycle. tAS is specified from CE = "L" or WE = "L", whichever occurs last. tWP is an overlap time of CE = "L" and WE = "L". tWR, tDS and tDH are specified from CE = "H" or WE = "H", whichever occurs first. tWHZ is specified by the time when DATA output is floating, not defined by the output level. 7. When I/O pins are in the output mode, don't apply the inverted input signal to the output pins.
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Semiconductor
MSM521209
PACKAGE DIMENSIONS
(Unit : mm)
SOJ36-P-400-1.27
Package material Lead frame material Pin treatment Solder plate thickness Package weight (g)
Epoxy resin Cu alloy Solder plating 5 mm or more 1.40 TYP.
Notes for Mounting the Surface Mount Type Package The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which are very susceptible to heat in reflow mounting and humidity absorbed in storage. Therefore, before you perform reflow mounting, contact Oki's responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times).
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